2-Input NOR Gate with Open Drain Output

The MC74VHC1G03 is an advanced high speed CMOS 2−input NOR gate with an open drain output fabricated with silicon gate CMOS technology. Features • High Speed: tPD = 3.6 ns (Typ) at VCC = 5 V • Low Internal Power Dissipation: ICC = 1 A (Max) at TA = 25°C • Power Down Protection Provided on

文件：194.05 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Single 2-Input NOR Gate with Open Drain Output

The MC74VHC1G03 / MC74VHC1GT03 is a 2−input NOR Gate with an open drain output in tiny footprint packages. The input structures provide protection when voltages up to 5.5 V are applied, regardless of the supply voltage. This allows the device to be used to interface 5 V circuits to 3 V circuit

文件：171.84 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

2-Input NAND Gate with Open Drain Output

The MC74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74VHC1G03 input structure prov

文件：607.47 Kbytes 页数：4 Pages

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亚历电子

Single 2-Input NOR Gate with Open Drain Output

The MC74VHC1G03 / MC74VHC1GT03 is a 2−input NOR Gate with an open drain output in tiny footprint packages. The input structures provide protection when voltages up to 5.5 V are applied, regardless of the supply voltage. This allows the device to be used to interface 5 V circuits to 3 V circuit

文件：171.84 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

Single 2-Input NOR Gate with Open Drain Output

The MC74VHC1G03 / MC74VHC1GT03 is a 2−input NOR Gate with an open drain output in tiny footprint packages. The input structures provide protection when voltages up to 5.5 V are applied, regardless of the supply voltage. This allows the device to be used to interface 5 V circuits to 3 V circuit

文件：171.84 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

2-Input NOR Gate with Open Drain Output

The MC74VHC1G03 is an advanced high speed CMOS 2−input NOR gate with an open drain output fabricated with silicon gate CMOS technology. Features • High Speed: tPD = 3.6 ns (Typ) at VCC = 5 V • Low Internal Power Dissipation: ICC = 1 A (Max) at TA = 25°C • Power Down Protection Provided on

文件：194.05 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Single 2?묲nput NOR Gate with Open Drain Output

The MC74VHC1G03 is an advanced high speed CMOS 2−input NOR gate with an open drain output fabricated with silicon gate CMOS technology. Features • High Speed: tPD = 3.6 ns (Typ) at VCC = 5 V • Low Internal Power Dissipation: ICC = 1 A (Max) at TA = 25°C • Power Down Protection Provided on

文件：84.59 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

2-Input NAND Gate with Open Drain Output

The MC74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74VHC1G03 input structure prov

文件：607.47 Kbytes 页数：4 Pages

ETL

亚历电子

Single 2?묲nput NOR Gate with Open Drain Output

The MC74VHC1G03 is an advanced high speed CMOS 2−input NOR gate with an open drain output fabricated with silicon gate CMOS technology. Features • High Speed: tPD = 3.6 ns (Typ) at VCC = 5 V • Low Internal Power Dissipation: ICC = 1 A (Max) at TA = 25°C • Power Down Protection Provided on

文件：84.59 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single 2-Input NOR Gate with Open Drain Output

The MC74VHC1G03 / MC74VHC1GT03 is a 2−input NOR Gate with an open drain output in tiny footprint packages. The input structures provide protection when voltages up to 5.5 V are applied, regardless of the supply voltage. This allows the device to be used to interface 5 V circuits to 3 V circuit

文件：171.84 Kbytes 页数：14 Pages

ONSEMI

安森美半导体