MC33GD3100A3EK中文资料EV Inverter Control; IGBT & SiC GDIC数据手册恩XP规格书

描述 Description

The GD3100 is an advanced single-channel gate driver for IGBTs/SiC. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.
Current and temperature sense minimizes IGBT/SiC stress during faults
Accurate and configurable under voltage lockout provides protection while ensuring sufficient gate drive voltage headroom
Autonomously manages severe faults and reports faults and status via INTB pin and an SPI interface. It is capable of directly driving gates of many IGBTs/SiC
Self-test, control, and protection functions are included for the design of high-reliability systems

特性 Features

High level of integration andflexibility for any IGBT/SiC module
• Galvanic signal isolation
• 10 A on/off power stage
• Active Miller Clamp
• 3.3 or 5.0 V I/O
• Compatible with 200 to 1700 V IGBTs/SiC
• SPI for programmability and diagnostics
• Reduces BOM costs and PCB size
Fast overcurrent or short circuitprotection
• Both I-sense or DESAT sense available
• Two-level turn-off
• Soft shutdown
Compliant with ISO26262 ASIL C/Dfunctional safety requirements (certification pending)
• VGE monitoring to verify communication between PWM input and Gate output
• Fail-safe pins allowing redundant gate control
• Secure SPI settings with Cycle Redundancy Check (CRC)
• Enforced deadtime protection
• Built-In Self-Test (BIST) for analog and digital circuits

应用 Application

Automotive
•Battery Management System
•Hybrid and Electric Vehicle Power Inverter
•Hybrid and Electric Vehicle Powertrain
Industrial
•Motor Drives