MC33169DTB-4.0中文资料安森美半导体数据手册PDF规格书

GaAs Power Amplifier Support IC

The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand–held telephones such as GSM and PCS. This device provides negative voltages for full depletion of Enhanced MESFETs as well as a priority management system of drain switching, ensuring that the negative voltage is always present before turning “on” the Power Amplifier. Additional features include an idle mode input and a direct drive of the N–Channel drain switch transistor. This product is available in a 4.0 V version intended for control of the RF Power Amplifier in GSM, DCS1800 and PCS applications.

• Negative Regulated Output for Full Depletion of GaAs MESFETs

• Drain Switch Priority Management Circuit

• CMOS Compatible Inputs

• Idle Mode Input (Standby Mode) for Very Low Current Consumption

• Output Signal Directly Drives N–Channel FET

• Low Startup and Operating Current