Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

文件：205.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

文件：113.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conversio

文件：205.47 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Hex Buffers

The MC14049UB hex inverter/buffer is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This complementary MOS device finds primary use where low power dissipation and/or high noise immunity is desired. This device provides logic−level conve

文件：201.15 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

文件：113.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Hex Buffers

文件：155.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

W Semiconductor Components Industries, LLC, 2004

文件：113.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Hex Buffers

文件：107 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Hex Buffers

文件：155.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Hex Buffers

文件：106.84 Kbytes 页数：7 Pages

ONSEMI

安森美半导体