B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

文件：177.67 Kbytes 页数：8 Pages

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安森美半导体

B-Suffix Series CMOS Gates

The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 Vdc to 18 Vdc • All

文件：177.67 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

B?뭆uffix Series CMOS Gates

文件：150.29 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

B?뭆uffix Series CMOS Gates

文件：150.29 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Package：14-SOIC（0.209"，5.30mm 宽）；包装：管件 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 2CH 4-INP SOEIAJ-14

ONSEMI

安森美半导体

Package：14-SOIC（0.209"，5.30mm 宽）；包装：管件 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 2CH 4-INP SOEIAJ-14

ONSEMI

安森美半导体