MC14011UBDR2资料datasheet下载原装现货-114ic电子网

首页 >MC14011UB>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
MC14011UBCP	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011UBCPG	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011UBD	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011UBDG	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011UBDR2	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011UBDR2G	文件：216.43 Kbytes Page：8 Pages	UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions. 文件：216.43 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011UBCP	文件：147.04 Kbytes Page：7 Pages	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011UBCPG	文件：194.06 Kbytes Page：7 Pages	UB-Suffix Series CMOS Gates 文件：194.06 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011UBCPG	文件：147.04 Kbytes Page：7 Pages	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
MC14011UBD	文件：147.04 Kbytes Page：7 Pages	UB?뭆uffix Series CMOS Gates 文件：147.04 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI

详细参数

型号：
MC14011UB
功能描述：
逻辑门 3-18V Quad 2-Input
RoHS：
否
制造商：
Texas Instruments
产品：
OR
逻辑系列：
LVC
栅极数量：
2
线路数量（输入/输出）：
2/1
高电平输出电流：
- 16 mA
低电平输出电流：
16 mA
传播延迟时间：
3.8 ns
电源电压-最大：
5.5 V
电源电压-最小：
1.65 V
最大工作温度：
+ 125 C
安装风格：
SMD/SMT
封装/箱体：
DCU-8
封装：
Reel

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市联世界科技有限公司	MC14011UBDR2	ONS	24+/25+		3372	原装正品现货库存价优	询价
深圳市佳杰伟业科技有限公司	MC14011UBDR2	ON	2410+	SOP-14	3668	优势代理渠道原装现货可全系列订货	询价
深圳市一线半导体有限公司	MC14011UBDR2G	ONS	24+		25000		询价
上海专毅电子科技有限公司	MC14011UBDR2G	ON	17+	C4000SO_1	9888	全新进口原装,现货库存	询价
上海意淼电子科技有限公司	MC14011UBDR2G	ON	23+	C4000SO_1	17320	全新原装假一赔十	询价
深圳市华来深电子有限公司	MC14011UBDR2G	ON	23+	SOP	8560	受权代理!全新原装现货特价热卖!	询价
深圳市纳立科技有限公司	MC14011UBDR2G		三年内		1983	只做原装正品	询价
深圳市赛芯源科技有限公司	MC14011UBDR2G	ON	2017+	SOP-14	5973	原装正品,诚信经营	询价
深圳市欧亚佳电子有限公司	MC14011UBDR2G	ON	20+	SMD	11520	特价全新原装公司现货	询价
深圳市英卓尔科技有限公司	MC14011UBDR2G	ON	20+	SOP14	2960	诚信交易大量库存现货	询价

更多MC14011UB供应商更新时间2025-10-4 14:30:00

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