MC-4R128FKE8S中文资料美光科技数据手册PDF规格书

Description

The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking systems, and other applications where high bandwidth and low latency are required.

MC-4R128FKE8S modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (µPD488588). These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design technologies.

Features

• 160 edge connector pads with 0.65mm pad spacing

• 128 MB Direct RDRAM storage

• Each RDRAM® has 32 banks, for 128 banks total on module

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5 V supply

• Powerdown self refresh modes

• Separate Row and Column buses for higher efficiency