MBT35200中文资料High Current PNP Bipolar Transistor for Load Management in Portable Applications数据手册ONSEMI规格书

描述 Description

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

特性 Features

• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

简介

MBT35200属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MBT35200晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。