MBRS410ET3中文资料肖特基功率整流器，表面贴装，4.0 A，10 V数据手册ONSEMI规格书

描述 Description

...employing the Schottky Barrier principle in a large area metal-to-silicon power diode.State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and \"Oring\" of multiple supply voltages and any other application where performance and size are critical.

特性 Features

• Very Low VF Accompanied by Low IR
• First in the Market Place with a 10 VRSchottky Rectifier
• Small Compact Surface Mountable Package with J – Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guardring for Stress Protection
• Mechanical Characteristics:Case: Epoxy, Molded
• Weight: 217 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260 ° C Max. for 10 Seconds
• Shipped in 16 mm Tape and Reel, 2500 units per reel
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• ESD Ratings: Machine Model = CHuman Body Model = 3B
• Marking: B4E1
• Pb-Free Package is Available

简介

MBRS410ET3属于分立半导体产品的二极管-整流器-单。由ONSEMI制造生产的MBRS410ET3二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。