丝印：MBRF20200CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

文件：99.88 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBRF20200CT；Package：ITO-220AB；SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

文件：443.34 Kbytes 页数：3 Pages

COMCHIP

典琦

丝印：MBRF20200CT；Package：ITO-220AB；20A High Power Schottky Barrier Rectifiersnull

■ Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part,

文件：99.88 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBRF20200CT；Package：ITO-220AB；SMD Schottky Barrier Rectifiers

Features - For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. - Metal silicon junction, majority carrier conduction. - High current capability. - Low power loss, high efficiency. - Plastic package has underwrites laboratory flammability cla

文件：443.34 Kbytes 页数：3 Pages

COMCHIP

典琦

SCHOTTKY RECTIFIER

Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability •

文件：122.74 Kbytes 页数：7 Pages

SMC

桑德斯微电子

Dual Common-Cathode Ultra Low VF Schottky Rectifier

Features • Guard ring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder Dip 260 °C, 40 s • Component in accordance to ROHS 2002/95/EC and WEEE 2002/96/EC

文件：346.49 Kbytes 页数：4 Pages

BWTECH

SCHOTTKY BARRIER TYPE DIODE

The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency s

文件：766.47 Kbytes 页数：2 Pages

KERSEMI

Low forward voltage drop

Description Littelfuse MBR series Schottky Barrier Rectifer is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pro

文件：621.82 Kbytes 页数：3 Pages

Littelfuse

力特

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 150 to 200 Volts Forward Current -20.0 Amperes FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forwa

文件：661.29 Kbytes 页数：2 Pages

CHENDA

辰达半导体

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

文件：1.08206 Mbytes 页数：2 Pages

TGS