MBRD5H100T4G数据手册分立半导体产品的二极管-整流器-单规格书PDF

描述 Description

The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

特性 Features

• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Epoxy Meets UL 94 V-0 @ 0.125 in
• Short Heat Sink Tab Manufactured - Not Sheared!
• NBRD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

应用 Application

• Power Supplies
• Power Supplies

简介

MBRD5H100T4G属于分立半导体产品的二极管-整流器-单。由制造生产的MBRD5H100T4G二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。