MBRD5H100_V01中文资料安森美半导体数据手册PDF规格书

This series of Power Rectifiers employs the Schottky Barrier

principle in a large metal−to−silicon power diode. State−of−the−art

geometry features epitaxial construction with oxide passivation and

metal overlay contact. Ideally suited for use in low voltage, high

frequency switching power supplies, free wheeling diodes, and

polarity protection diodes.

特性 Features

• Guardring for Stress Protection

• Low Forward Voltage

• 175°C Operating Junction Temperature

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Short Heat Sink Tab Manufactured − Not Sheared!

• NBRD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant*

Mechanical Characteristics:

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0

• Weight: 0.4 grams (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Device Meets MSL1 Requirements

• ESD Ratings:

♦ Machine Model = C (> 400 V)

♦ Human Body Model = 3B (> 8000 V)