MBRD1045G数据手册ONSEMI中文资料规格书

描述 Description

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

特性 Features

• Guarding for Stress Protection
• Low Forward Voltage
• Epoxy Meets UL94, VO at 1/8\"
• Short Heat Sink Tab Manufactured - Not Sheared!
• Similar in Size to the Industry Standard TO-220 PackageMechanical Characteristics:
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• 150°C Operating Junction Temperature
• AEC-Q101 Qualified and PPAP Capable
• SBRB and SBRD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

应用 Application

• Switching Power Supplies, Power Inverters