MBRB8H100T4G中文资料肖特基势垒整流器，100 V，8.0 A数据手册ONSEMI规格书

描述 Description

The Schottky Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.

特性 Features

• Guarding for Stress Protection
• Low Forward Voltage
• 175C Operating Junction Temperature
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Short Heat Sink Tab Manufactured - Not Sheared!
• Case: Molded Expoxy
• Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds
• Epoxy Meets UL94, VO at 1/8
• These are Pb-Free Packages
• NBRB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

应用 Application

• Switching Power Supplies, Power Inverters

简介

MBRB8H100T4G属于分立半导体产品的二极管-整流器-单。由制造生产的MBRB8H100T4G二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。