MBRB20100CT-M3

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C •Materialcategorization:fordefinitionsofcompliance plea

MBRB20100CT-M3

Lower power losses, high efficiency

MBRB20100CT-M3

Dual Common-Cathode High-Voltage Schottky Rectifier; Trench MOS Schottky technology\nLower power losses, high efficiency\nLow forward voltage drop;

MBRB20100CT-M3/4W

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 100V TO263

Vishay General Semiconductor - Diodes Division

MBRB20100CT-M3/8W

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 100V TO263

Vishay General Semiconductor - Diodes Division

VS-MBR20100CT-M3

HighPerformanceSchottkyRectifier,2x10A

FEATURES •150°CTJoperation •Lowforwardvoltagedrop •Highfrequencyoperation •Highpurity,hightemperatureepoxy encapsulationforenhancedmechanical strengthandmoistureresistance •Guardringforenhancedruggednessandlongterm reliability •Designedandqualifiedaccordi

VS-MBR20100CT-M3

HighPerformanceSchottkyRectifier,2x10A

VS-MBRB20100CT-M3

Highfrequencyoperation