MBRA120ET3数据手册分立半导体产品的二极管-整流器-单规格书PDF

描述 Description

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

特性 Features

• Compact Package with J-Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over-Voltage Protection
• Optimized for Low Leakage CurrentMechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL94, VO at 1/8\"
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Polarity: Polarity Band Indicates Cathode Lead
• Available in 12 mm Tape, 5000 Units per 13 inch Reel
• Marking: B1E2

简介

MBRA120ET3属于分立半导体产品的二极管-整流器-单。由制造生产的MBRA120ET3二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。