40 Amp Schottky Barrier Rectifier 20 to 100 Volts

40 Amp Schottky Barrier Rectifier 20 to 100 Volts Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability, Low VF • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection • Plastic Package Has UL Flammability Classifi

文件：110.87 Kbytes 页数：3 Pages

MCC

40 Amp Schottky Barrier Rectifier 20 to 60 Volts

Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability, Low VF • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection • Plastic Package Has UL Flammability Classification 94V-0

文件：1.04642 Mbytes 页数：2 Pages

MCC

40 Amp Schottky Barrier Rectifier 20 to 60 Volts

MCC

美微科

NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifi er

NPN Epitaxial Planar Silicon Transistor Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=16GHz typ (VCE=5V) • High gain : |S21e|2=17.5dB typ (f=1GHz) • Halogen free compliance

文件：276.71 Kbytes 页数：9 Pages

SANYO

三洋

RF Transistor 8V, 150mA, fT=16GHz, NPN Single MCPH4

RF Transistor 8V, 150mA, fT=16GHz, NPN Single MCPH4 Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=16GHz typ (VCE=5V) • High gain : |S21e|2=17.5dB typ (f=1GHz) • Halogen free compliance

文件：367.8 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

RF Transistor 8V, 150mA, fT=16GHz, NPN Single MCPH4

文件：378.17 Kbytes 页数：11 Pages

ONSEMI

安森美半导体