MBR4015LWT中文资料40 A, 15 V Schottky Rectifier数据手册ONSEMI规格书

描述 Description

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. The Schottky Rectifier features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

特性 Features

• Highly Stable Oxide Passivated Junction
• Guardring for Over-Voltage Protection
• Low Forward Voltage Drop
• Dual Diode Construction - Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating
• Full Electrical Isolation without Additional HardwareMechanical Characteristics:
• Case:Molded Epoxy
• Epoxy Meets UL94, VO at 1/8\"
• Weight: 4.3 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
• Shipped 30 Units Per Plastic Tube
• Marking: B4015L
• Pb-Free Package is Available

简介

MBR4015LWT属于分立半导体产品的二极管-整流器-阵列。由制造生产的MBR4015LWT二极管 - 整流器 - 阵列二极管和整流器阵列系列中的产品可在单个封装内包含两个或多个分立二极管。其特征表述类似于单个分立二极管，并增加了“二极管配置”属性，该属性指示设备中二极管之间任何内部连接的存在情况和特性。请注意，具有全桥配置的阵列被专门排除在外，并列为单独的产品系列。