High Surge Capability

文件：446.76 Kbytes 页数：3 Pages

GENESIC

Package：双塔架；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 45V 200A 2 TOWER

GeneSiC Semiconductor

POWERTAP II??SWITCHMODE??Power Rectifier

POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Features: • Dual Diode Construction — May be Paralleled for Higher Current Output • Guardring for Stress Protection • Lo

文件：63.37 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉

POWERTAP II SWITCHMODE Power Rectifier

POWERTAP II SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; May be Paralleled for Higher Current Output • Guard−Ring for Stress Protection • Low Forward Voltage Drop • 150°C Opera

文件：117.3 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER

SWITCHMODE Schottky Barrier Rectifier POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high f

文件：57.17 Kbytes 页数：2 Pages

MOTOROLA

摩托罗拉