These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.

Features

• Extremely Low vF

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated Junction

• Low Stored Charge, Majority Carrier Conduction

• Pb−Free Packages are Available*

MBR360属于分立半导体产品 > 二极管 - 整流器 - 单。安森美半导体公司制造生产的MBR360二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。