MBR3045CTe3/TU中文资料Diode and Rectifier Devices数据手册Microchip规格书

描述 Description

Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency.

特性 Features

·Plastic package with UL 94V-0 flammability classification
·Flame retardant epoxy molding component
·Guard-ring for overvoltage protection
· Low power loss, high efficiency
·RoHS compliant (2002/95/EC)
  ROHS, PB Free-->  ROHS

简介

MBR3045CTe3/TU属于分立半导体产品的二极管-整流器-阵列。由制造生产的MBR3045CTe3/TU二极管 - 整流器 - 阵列二极管和整流器阵列系列中的产品可在单个封装内包含两个或多个分立二极管。其特征表述类似于单个分立二极管，并增加了“二极管配置”属性，该属性指示设备中二极管之间任何内部连接的存在情况和特性。请注意，具有全桥配置的阵列被专门排除在外，并列为单独的产品系列。