SCHOTTKY BARRIER DIODE

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JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forw

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MOTOROLA

摩托罗拉

Optoisolator Silicon NPN Darlington Phototransistor Output

Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6–Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay d

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NTE

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

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PHI

PHI