MBR2515L中文资料15 V，25 A，肖特基整流器数据手册ONSEMI规格书

描述 Description

The Schottky Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, low voltage converters, O-Ring diodes and polarity protection devices.

特性 Features

• Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 70 C)
• Guardring for Stress Protection
• Highly Stable Oxide Passivated Junction (100 C Operating Junction Temperature)
• Epoxy Meets UL94, VO at 1/8\"Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
• Shipped 50 Units Per Plastic Tube
• Marking: B2515L
• Pb-Free Package is Available

简介

MBR2515L属于分立半导体产品的二极管-整流器-单。由ONSEMI制造生产的MBR2515L二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。