MBR20H100CT中文资料肖特基势垒整流器，H 系列，100 V，20 A数据手册ONSEMI规格书

描述 Description

Enhanced Schottky rectifiers with lower VF, higher surge, and lower IR parameters

特性 Features

• Low Forward Voltage: 0.64 V @ 125C
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• Guard-Ring for Stress Protection
• Pb-Free Package is AvailableMechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94, V-0 @ 0.125 in
• Weight: Approximately 1.9 grams
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds
• AEC-Q101 Qualified and PPAP Capable
• NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

应用 Application

• Power Supply - Output Rectification
• Power Management
• Instrumentation

简介

MBR20H100CT属于分立半导体产品的二极管-整流器-阵列。由制造生产的MBR20H100CT二极管 - 整流器 - 阵列二极管和整流器阵列系列中的产品可在单个封装内包含两个或多个分立二极管。其特征表述类似于单个分立二极管，并增加了“二极管配置”属性，该属性指示设备中二极管之间任何内部连接的存在情况和特性。请注意，具有全桥配置的阵列被专门排除在外，并列为单独的产品系列。