This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features:

Features

• 20 Amps Total (10 Amps Per Diode Leg)

• Guard−Ring for Stress Protection

• Low Forward Voltage

• 150°C Operating Junction Temperature

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Low Power Loss/High Efficiency

• High Surge Capacity

• Low Stored Charge Majority Carrier Conduction

• Shipped 50 units per plastic tube

• Pb−Free Packages are Available*

MBR20100CTG属于分立半导体产品 > 二极管 - 整流器 - 阵列。安森美半导体公司制造生产的MBR20100CTG二极管 - 整流器 - 阵列二极管和整流器阵列系列中的产品可在单个封装内包含两个或多个分立二极管。其特征表述类似于单个分立二极管，并增加了“二极管配置”属性，该属性指示设备中二极管之间任何内部连接的存在情况和特性。请注意，具有全桥配置的阵列被专门排除在外，并列为单独的产品系列。