MBR120VLSF数据手册分立半导体产品的二极管-整流器-单规格书PDF

描述 Description

The MBR120VLSFT1 uses the Schottky Barrier principle with a large area metal-to-silicon power diode.Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.This package also provides an easy to work with alternative to the leadless 34 package style.Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards.Typical applications are ac/dc and dc-dc converters, reverse battery protection, \"ORing\" of multiple supply voltages and any other application where performance and size are critical.

特性 Features

• Guardring for Stress Protection
• Optimized for Very Low Forward Voltage
• 125 C Operating Junction Temperature
• Epoxy Meets UL94, VO
• Package Designed for Optimal Automated Board Assembly
• ESD Rated Machine Model C
• ESD Rated Human Body Model 3B
• Device Meets MSL 1 Requirements
• Pb-Free Packages are Available

简介

MBR120VLSF属于分立半导体产品的二极管-整流器-单。由制造生产的MBR120VLSF二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。