MBR1100中文资料1.0 A, 100 V, Schottky Barrier Rectifier数据手册ONSEMI规格书

描述 Description

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.

特性 Features

• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard-Ring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• High Surge CapacityMechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max.for 10 Seconds
• Shipped in plastic bags, 1000 per bag
• Available Tape and Reeled, 5000 per reel, by adding a \"RL'' suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: B1100
• These are Pb-Free Devices

简介

MBR1100属于分立半导体产品的二极管-整流器-单。由制造生产的MBR1100二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。