丝印：MBR1060CT；Package：TO-220AB；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：2.39945 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR1060CT；Package：TO-220AB；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：2.39945 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MDDMBR1060CT；Package：TO-220AB；SCHOTTKY BARRIER RECTIFIER

文件：573 Kbytes 页数：2 Pages

CHENDA

辰达半导体

SCHOTTKY BARRIER RECTIFIERS

Reverse Voltage - 40 to 200 V Forward Current - 10 A FEATURES • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • Mounting position: any Mechanical data • Case: TO-220 • Approx. Weight:

文件：371.69 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Metal of siliconrectifier, majonty carrier conducton

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：1.13967 Mbytes 页数：2 Pages

KERSEMI

Dual rectifier construction, positive center tap

Features& Mechanical Characteristics Features ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction， positive center tap ● Metal of silicon rectifier， majority carrier conduction ● Low forward voltage， high efficiency ● Guarding for

文件：2.32993 Mbytes 页数：6 Pages

Surge

10.0AMP. Schottky Barrier Rectifiers

Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high freque

文件：207.44 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

文件：197.32 Kbytes 页数：2 Pages

MOSPEC

统懋

Switchmode Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

文件：131.71 Kbytes 页数：2 Pages

MOSPEC

统懋

SCHOTTKY RECTIFIER

Features  150 C TJ operation  Center tap configuration  Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Thi

文件：552.11 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子