64M (4M x 16) BIT

■ DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can a

文件：625.43 Kbytes 页数：57 Pages

FUJITSU

富士通

64M (4M x 16) BIT

■ DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can a

文件：625.43 Kbytes 页数：57 Pages

FUJITSU

富士通

64M (4M x 16) BIT

■ DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can a

文件：625.43 Kbytes 页数：57 Pages

FUJITSU

富士通

64M (4M x 16) BIT

■ DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can a

文件：625.43 Kbytes 页数：57 Pages

FUJITSU

富士通

64M (4M x 16) BIT

■ DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can a

文件：625.43 Kbytes 页数：57 Pages

FUJITSU

富士通

64M (4M x 16) BIT

■ DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can a

文件：625.43 Kbytes 页数：57 Pages

FUJITSU

富士通

64M (4M x 16) BIT

■ DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can a

文件：625.43 Kbytes 页数：57 Pages

FUJITSU

富士通

64M (4M x 16) BIT

Fujitsu

富士通