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MBM29LV160T-90PFTR

FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飞索飞索半导体

EN29LV160T-90B

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90BI

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90BIP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90BP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90T

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90TI

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90TIP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90TP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

MBM29LV160T-90

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飞索飞索半导体

MBM29LV160T-90

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV160T-90PBT

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飞索飞索半导体

MBM29LV160T-90PBT

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV160T-90PCV

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV160T-90PCV

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飞索飞索半导体

MBM29LV160T-90PFTN

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飞索飞索半导体

MBM29LV160T-90PFTN

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV160T-90PFTY

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV160T-90PN

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

详细参数

  • 型号:

    MBM29LV160T-90PFTR

  • 制造商:

    SPANSION

  • 制造商全称:

    SPANSION

  • 功能描述:

    FLASH MEMORY CMOS 16M(2M x 8/1M x 16) BIT

供应商型号品牌批号封装库存备注价格
FUJITSU
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FUJITSU
22+
N/A
4897
绝对原装!现货热卖!
询价
23+
N/A
48900
正品授权货源可靠
询价
FUJITSU/富士通
23+
SMD
50000
全新原装正品现货,支持订货
询价
FUJITSU/富士通
22+
SMD
25000
只做原装,原装,假一罚十
询价
FUJITSU
2000
BGA
1350
原装现货海量库存欢迎咨询
询价
FUJITSU
22+
QFN
28600
只做原装正品现货假一赔十一级代理
询价
FUJITSU
21+
QFN
5000
原装现货/假一赔十/支持第三方检验
询价
FUJITSU
21+
QFN
50000
全新原装正品现货,支持订货
询价
FUJITSU
19+ 20+
QFN
32350
深圳存库原装现货
询价
更多MBM29LV160T-90PFTR供应商 更新时间2024-4-23 14:51:00