MBM29DL324TE90TN中文资料飞索数据手册PDF规格书

■ DESCRIPTION

The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

■ FEATURES

• 0.23 µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes (Refer to “MBM29DL32XTE/BE Device Bank Divisions” in “■ FEATURES”)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

• Compatible with JEDEC-standard world-wide pinouts

48-pin TSOP (1) (Package suffix : TN − Normal Bend Type, TR − Reversed Bend Type)

63-ball FBGA (Package suffix : PBT)

• Minimum 100,000 program/erase cycles

• High performance

80 ns maximum access time

• Sector erase architecture

Eight 4 Kword and sixty-three 32 Kword sectors in word mode

Eight 8 Kbyte and sixty-three 64 Kbyte sectors in byte mode

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• HiddenROM region

64 Kbyte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence

Factory serialized and protected to provide a secure electronic serial number (ESN)

• WP/ACC input pin

At VIL, allows protection of boot sectors, regardless of sector group protection/unprotection status

At VACC, increases program performance

• Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

• Sector group protection

Hardware method disables any combination of sector groups from program or erase operations

• Sector Group Protection Set function by Extended sector group protection command

• Fast Programming Function by Extended Command

• Temporary sector group unprotection

Temporary sector group unprotection via the RESET pin.

• In accordance with CFI (Common Flash Memory Interface)