32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

文件：1.58814 Mbytes 页数：80 Pages

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32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

文件：1.58814 Mbytes 页数：80 Pages

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32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

文件：1.58814 Mbytes 页数：80 Pages

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32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

文件：1.58814 Mbytes 页数：80 Pages

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FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

文件：1.27865 Mbytes 页数：84 Pages

SPANSION

飞索

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

文件：1.58814 Mbytes 页数：80 Pages

FUJITSU

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

文件：1.58814 Mbytes 页数：80 Pages

FUJITSU

富士通

FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or 2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

文件：1.27865 Mbytes 页数：84 Pages

SPANSION

飞索

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

文件：1.58814 Mbytes 页数：80 Pages

FUJITSU

富士通

32M (4M x 8/2M x 16) BIT Dual Operation

■ DESCRIPTION The MBM29DL32XTE/BE are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase

文件：1.58814 Mbytes 页数：80 Pages

FUJITSU

富士通