16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

文件：1.14512 Mbytes 页数：76 Pages

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FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

文件：1.05624 Mbytes 页数：76 Pages

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16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

文件：1.14512 Mbytes 页数：76 Pages

FUJITSU

富士通

16M (2M x 8/1M x 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTD/BD are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTD/BD are offered in a 48-pin TSOP(I) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard

文件：1.14512 Mbytes 页数：76 Pages

FUJITSU

富士通

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

文件：1.05624 Mbytes 页数：76 Pages

SPANSION

飞索

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

文件：1.05624 Mbytes 页数：76 Pages

SPANSION

飞索

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

文件：1.05624 Mbytes 页数：76 Pages

SPANSION

飞索

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

文件：1.05624 Mbytes 页数：76 Pages

SPANSION

飞索

FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

■ GENERAL DESCRIPTION The MBM29DL16XTE/BE are a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered in a 48-pin TSOP(1) and 48-pin FBGA Package. These devices are designed to be programmed in-system with the standard s

文件：1.05624 Mbytes 页数：76 Pages

SPANSION

飞索