MBC13917数据手册恩XP中文资料规格书

描述 Description

Overview The MBC13917 is a cost-effective, high isolation amplifier fabricated with an advanced RF BiCMOS process using the SiGe:C module. This is the leadless package version of the MBC13916 device. This device is designed for a wide range of general purpose RF applications, yet has excellent high frequency gain and noise figure. On-chip bias circuitry sets the bias point while matching is accomplished off-chip, affording the maximum in application flexibility.

特性 Features

•Usable frequency range = 100 to 2500 MHz

•27 dB typical gain at 434 MHz, Vcc = 2.7V

•NFmin (device level) = 0.95 dB @ 434 MHz

•NFmin (device level) = 0.95 dB @ 900 MHz

•6.5 dBm typical output power at -10 dBm Pin at 900 MHz, Vcc = 2.7V

•46 dB typical reverse isolation (device level) at 434 MHz, Vcc = 2.7V

•4.7 mA typical bias current at Vcc = 2.7V

•2.1 to 3.3V supply

•Industry standard MLPD-6 leadless package

•Available only in tape and reel packaging