MB85RS1MTPNF-G-JNERE1集成电路（IC）的存储器规格书PDF中文资料

厂商型号	MB85RS1MTPNF-G-JNERE1
参数属性	MB85RS1MTPNF-G-JNERE1 封装/外壳为8-SOIC（0.154"，3.90mm 宽）；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为集成电路（IC）的存储器；产品描述：IC FRAM 1MBIT SPI 40MHZ 8SOP
功能描述	1M (128 K X 8) Bit SPI
封装外壳	8-SOIC（0.154"，3.90mm 宽）
文件大小	2.60117 Mbytes
页面数量	40 页
生产厂商	RAMXEED
中文名称	富士通
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-30 20:00:00
人工找货	MB85RS1MTPNF-G-JNERE1价格和库存，欢迎联系客服免费人工找货

DESCRIPTION

MB85RS1MT is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

MB85RS1MT adopts the Serial Peripheral Interface (SPI).

The MB85RS1MT is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS1MT can be used for 1013 read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E2PROM.

MB85RS1MT does not take long time to write data like Flash memories or E2PROM, and MB85RS1MT takes

no wait time.

 FEATURES

• Bit configuration : 131,072 words  8 bits

• Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 1.8 V to 2.7 V, 25 MHz (Max)

2.7 V to 3.6 V, 30 MHz (Max)

For FSTRD command 2.7 V to 3.6 V, 40 MHz (Max)

• High endurance : 1013 times / byte

• Data retention : 10 years (+85 C), 95 years (  55 C), over 200 years (  35 C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power consumption : Operating power supply current 9.5 mA (Max@30 MHz)

Standby current 120 A (Max)

Sleep current 10 A (Max)

• Operation ambient temperature range : -40 C to +85 C

• Package : 8-pin plastic SOP 150mil

8-pin plastic DFN 5mm  6mm

RoHS compliant