MB85RS128TYPNF-GS-BCE1中文资料富士通数据手册PDF规格书

DESCRIPTION

MB85RS128TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming

the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such

as automotive applications.

MB85RS128TY adopts the Serial Peripheral Interface (SPI).

The MB85RS128TY is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS128TY can be used for 1013 read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E2PROM.

As MB85RS128TY does not need any waiting time in writing process, the write cycle time of MB85RS128TY

is much shorter than that of Flash memories or E2PROM.

FEATURES

Bit configuration : 16,384 words  8 bits

Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

Operating frequency : 40 MHz (Max)

High endurance : 1013 times / byte

Data retention : 40.2 years (+85 C),

10.9 years (+105 C)

3.38 years (+125 C) or more

Under evaluation for more than 3.38 year(+125 C)

Operating power supply voltage : 1.8 V to 3.6 V

Low power consumption : Operating power supply current 2.5 mA (Max@40 MHz)

Standby current 45 A (Max)

Sleep current 12 A (Max)

Operation ambient temperature range :  40 C to +125 C

Package : 8-pin plastic SOP

AEC-Q100 Grade 1 compliant

RoHS compliant