MB85RDP16LX中文资料富士通数据手册PDF规格书

 DESCRIPTION

MB85RDP16LX is a Data-Processing FeRAM in a configuration of 2,048 words × 8 bits incorporating a 43-bit or

46-bit binary counter, where FeRAM (Ferroelectric Random Access Memory) is able to retain data without

using a back-up battery, can be used for 1013 read/write operations and takes no wait time to write data, using

the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

MB85RDP16LX can be accessed via Serial Peripheral interface (SPI) or Dual SPI.

This Data-Processing FeRAM features short power up time, fast memory access and ultra-low power

consumption. Together with the 43-bit or 46-bit binary counter function, MB85RDP16LX fits perfectly into

energy harvesting and rotary encoder applications.

 FEATURES

• Non-volatile memory configuration : 2,048 words × 8 bits

• Binary counter bit (for POS0/1/2/3) : 43-bit range (42bit mantissa + sign bit)

• Binary counter bit (for DIBC/DDBC) : 46-bit range (45bit mantissa + sign bit)

• Binary counter operation : Judged by the input position data or directly Increment and Decrement

• Interface : SPI (Serial Peripheral Interface) / Dual SPI

Corresponding to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 15 MHz (Max for SPI) / 7.5 MHz (Max for Dual SPI)

• High endurance : 1013 times / byte

• Data retention : 23.7 years (+105℃)

8.4 years (+125℃)

• Operating power supply voltage : 1.65 V to 1.95 V

• Low power consumption : Operating power supply current 0.7 mA (Max @15 MHz)

Standby current 11 μA (Max @+125℃), 1 μA (+25℃)

• Operation ambient temperature : －40℃ to +125℃

• Package : 8-pin plastic SON

RoHS compliant