MB85RD16LX中文资料富士通数据手册PDF规格书

 DESCRIPTION

MB85RD16LX is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

MB85RD16LX can be accessed via Serial Peripheral interface (SPI) or Dual SPI.

The MB85RD16LX is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RD16LX can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

The MB85RD16LX does not take long time to write data like Flash memory or E2PROM, and MB85RD16LX takes no wait time

 FEATURES

• Non-volatile memory configuration : 2,048 words × 8 bits

• Interface : SPI (Serial Peripheral Interface) / Dual SPI

Corresponding to SPI mode 0 (0, 0) and mode 3 (1, 1)

• Operating frequency : 15 MHz (Max for SPI) / 7.5 MHz (Max for Dual SPI)

• High endurance : 1013 times / byte

• Data retention : 27.3 years (+105℃)

8.4 years (+125℃)

• Operating power supply voltage : 1.65 V to 1.95 V

• Low power consumption : Operating power supply current 0.7 mA (Max @15 MHz)

Standby current 11 μA (Max @+125℃), 1 μA (+25℃)

• Operation ambient temperature : －40℃ to +125℃

• Package : 8-pin plastic SON

RoHS compliant