MB85RC512TPNF-G-JNE1中文资料富士通数据手册PDF规格书

 DESCRIPTION

The MB85RC512T is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 65,536

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

Unlike SRAM, the MB85RC512T is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC512T has improved to be

at least 1013 cycles, significantly outperforming other nonvolatile memory products in the number.

The MB85RC512T does not need a polling sequence after writing to the memory such as the case of Flash

memory or E2PROM.

 FEATURES

• Bit configuration : 65,536 words  8 bits

• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

• Operating frequency : 3.4 MHz (Max @HIGH SPEED MODE)

1 MHz (Max @FAST MODE PLUS)

• Read/write endurance : 1013 times / byte

• Data retention : 10 years (  85 C), 95 years (  55 C)

• Operating power supply voltage: 1.7 V to 3.6 V

• Low-power consumption : Operating power supply current 0.71 mA (Typ @3.4 MHz)

1.2 mA (Max @3.4 MHz)

Standby current 15 A (Typ)

Sleep current 4 A (Typ)

• Operation ambient temperature range

:  40 C to  85 C

• Package : 8-pin plastic SOP 150mil

RoHS compliant