MB85R4M2TFN-G-JAE2集成电路（IC）的存储器规格书PDF中文资料

厂商型号	MB85R4M2TFN-G-JAE2
参数属性	MB85R4M2TFN-G-JAE2 封装/外壳为44-TSOP（0.400"，10.16mm 宽）；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为集成电路（IC）的存储器；产品描述：IC FRAM 4MBIT 44TSOP
功能描述	4 M (256 K × 16) Bit
封装外壳	44-TSOP（0.400"，10.16mm 宽）
文件大小	1.27781 Mbytes
页面数量	25 页
生产厂商	RAMXEED
中文名称	富士通
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-3 17:29:00
人工找货	MB85R4M2TFN-G-JAE2价格和库存，欢迎联系客服免费人工找货

DESCRIPTIONS

The MB85R4M2T is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144

words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

process technologies.

The MB85R4M2T is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R4M2T can be used for 1013 read/write operations, which is a

significant improvement over the number of read and write operations supported by Flash memory and

E2PROM. The MB85R4M2T uses a pseudo-SRAM interface.

 FEATURES

• Bit configuration : 262,144 words × 16 bits

• LB and UB data byte control : Available Configuration of 524,288 words × 8 bits

• Read/write endurance : 1013 times / 16 bits

• Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power operation : Operating power supply current 20 mA (Max)

Standby current 150 μA (Max)

Sleep current 20 μA (Max)

• Operation ambient temperature range : − 40 °C to + 85 °C

• Package : 44-pin plastic TSOP

RoHS compliant