MB85R4M2T集成电路（IC）的存储器规格书PDF中文资料

DESCRIPTIONS

The MB85R4M2T is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144

words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

process technologies.

The MB85R4M2T is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R4M2T can be used for 1013 read/write operations, which is a

significant improvement over the number of read and write operations supported by Flash memory and

E2PROM. The MB85R4M2T uses a pseudo-SRAM interface.

 FEATURES

• Bit configuration : 262,144 words × 16 bits

• LB and UB data byte control : Available Configuration of 524,288 words × 8 bits

• Read/write endurance : 1013 times / 16 bits

• Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage : 1.8 V to 3.6 V

• Low power operation : Operating power supply current 20 mA (Max)

Standby current 150 μA (Max)

Sleep current 20 μA (Max)

• Operation ambient temperature range : − 40 °C to + 85 °C

• Package : 44-pin plastic TSOP

RoHS compliant