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MB84VD22292EA中文资料富士通数据手册PDF规格书
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MB84VD22292EA规格书详情
■ FEATURES
• Power supply voltage of 2.7 V to 3.3 V
• High performance
90 ns maximum access time (Flash)
70 ns maximum access time (SRAM)
• Operating Temperature
–25°C to +85°C
• Package 71-ball BGA
1. FLASH MEMORY
• Simultaneous Read/Write operations (dual bank)
Multiple devices available with different bank sizes
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
• Minimum 100,000 write/erase cycles
• Sector erase architecture
Eight 4 K words and sixty three 32 K words.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
MB84VD2228X: Top sector
MB84VD2229X: Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
• Low VCCf write inhibit ≤ 2.5 V
• Hidden ROM (Hi-ROM) region
64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC input pin
At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status
(MB84VD2228XEA/EE:SA69,SA70 MB84VD2229XEA/EE:SA0,SA1)
At VIH, allows removal of boot sector protection
At VACC, program time will reduse by 40.
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
• Please refer to “MBM29DL32XTE/BE” data sheet in detailed function
2. SRAM
• Power dissipation
Operating : 50 mA max.
Standby : 25 µA max.
• Power down features using CE1s and CE2s
• Data retention supply voltage: 1.5 V to 3.3 V
• CE1s and CE2s Chip Select
• Byte data control: LBs (DQ0 to DQ7), UBs (DQ8 to DQ15)
产品属性
- 型号:
MB84VD22292EA
- 制造商:
FUJITSU
- 制造商全称:
Fujitsu Component Limited.
- 功能描述:
32M(X 8/X16) FLASH MEMORY & 8M(X 8/X16) STATIC RAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FUJITSU |
05+ |
原厂原装 |
14216 |
只做全新原装真实现货供应 |
询价 | ||
FUJITSU |
23+ |
BGA |
5500 |
原装无铅,优势热卖 |
询价 | ||
FUJITSU |
18+ |
BGA |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
FUJITSU/富士通 |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
FUJITSU |
2002 |
BGA |
820 |
原装现货海量库存欢迎咨询 |
询价 | ||
FUJITSU |
2339+ |
BGA510 |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
FUJITS |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
3000 |
公司现货 |
询价 | |||||
FUJI |
22+ |
BGA |
3000 |
原装正品,支持实单 |
询价 | ||
FUJITSU |
0310 |
1 |
公司优势库存 热卖中! |
询价 |