32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

■ FEATURES • Power supply voltage of 2.7 to 3.3 V • High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) • Operating Temperature –25 to +85°C • Package 73-ball BGA 1.FLASH MEMORY • Simultaneous Read/Write operations (dual bank) Miltiple devi

文件：1.58981 Mbytes 页数：61 Pages

FUJITSU

富士通

32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

■ FEATURES • Power supply voltage of 2.7 to 3.3 V • High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) • Operating Temperature –25 to +85°C • Package 73-ball BGA 1.FLASH MEMORY • Simultaneous Read/Write operations (dual bank) Miltiple devi

文件：1.58981 Mbytes 页数：61 Pages

FUJITSU

富士通

32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

■ FEATURES • Power supply voltage of 2.7 to 3.3 V • High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) • Operating Temperature –25 to +85°C • Package 73-ball BGA 1.FLASH MEMORY • Simultaneous Read/Write operations (dual bank) Miltiple devi

文件：1.58981 Mbytes 页数：61 Pages

FUJITSU

富士通

32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

■ FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) • Operating Temperature –25°C to +85°C • Package 71-ball BGA 1.FLASH MEMORY • Simultaneous Read/Write operations (dual bank) Multiple

文件：1.38335 Mbytes 页数：63 Pages

FUJITSU

富士通

32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

■ FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) • Operating Temperature –25°C to +85°C • Package 71-ball BGA 1.FLASH MEMORY • Simultaneous Read/Write operations (dual bank) Multiple

文件：1.38335 Mbytes 页数：63 Pages

FUJITSU

富士通