MB84VD2008-10中文资料富士通数据手册PDF规格书

■ FEATURES

• Power supply voltage of 2.7 to 3.6 V

• High performance

100 ns maximum access time

• Operating Temperature

–20 to +85°C

— FLASH MEMORY

• Simultaneous operations Read-while Erase or Read-while-Program

• Minimum 100,000 write/erase cycles

• Sector erase architecture

Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

MB84VD2008: Top sector

MB84VD2009: Bottom sector

• Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready-Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

• Please refer to MBM29DL800TA/BA data sheet in detailed function

— SRAM

• Power dissipation

Operating : 50 mA max.

Standby : 50 µA max.

• Data retention supply voltage: 2.0 V to 3.6 V