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FRF9150H	文件：49.12 Kbytes Page：6 Pages	23A,-100V,0.140Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FRF9150R	文件：49.12 Kbytes Page：6 Pages	23A,-100V,0.140Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutron	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FRK9150	文件：49.2 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FRK9150D	文件：48.62 Kbytes Page：6 Pages	26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25MΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FRK9150H	文件：48.62 Kbytes Page：6 Pages	26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25MΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FRK9150R	文件：48.62 Kbytes Page：6 Pages	26A,-100V,0.125Ohm,RadHard,P-ChannelPowerMOSFETs Description IntersilhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25MΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutronhardnessrangi	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FSF9150D	文件：45.07 Kbytes Page：8 Pages	22A,-100V,0.140Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FSF9150R	文件：45.07 Kbytes Page：8 Pages	22A,-100V,0.140Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FSYA9150D	文件：56.17 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
FSYA9150R	文件：56.17 Kbytes Page：8 Pages	RadiationHardened,SEGRResistantP-ChannelPowerMOSFETs TheDiscreteProductsOperationofIntersilhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticular,iscombinedwith100K	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
HDM9150	文件：188.78 Kbytes Page：6 Pages	FrequencySynthesizer	SHOULDERShoulder 无锡市好达电子有限公司	SHOULDER
HV9150	文件：1.12236 Mbytes Page：15 Pages	HighVoltageOutputHystereticModeStepUpDC/DCController GeneralDescription TheHV9150isahighoutputvoltagehystereticmodestepupDC/DCcontrollerthathasbothabuilt-inchargepumpconverterandalinearregulatorforawiderangeofinputvoltage.Thechargepumpconvertermodeisidealforbatterypoweredapplications.Theinternalconverte	SUTEX Supertex, Inc	SUTEX
IRF9150	文件：319.25 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor •DESCRIPTION •Bedesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower. •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.15Ω •	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF9150	文件：152.99 Kbytes Page：3 Pages	-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
IRF9150	文件：57.47 Kbytes Page：7 Pages	-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IRFP9150	文件：59.82 Kbytes Page：7 Pages	25A,100V,0.150Ohm,P-ChannelPowerMOSFET ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicon-gatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators, switchingc	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IRH9150	文件：109.15 Kbytes Page：8 Pages	RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(T0-204AE) InternationalRectifier’sRADHardHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeenchara	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRH9150	文件：185.55 Kbytes Page：8 Pages	SimpleDriveRequirements	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRHM9150	文件：168.87 Kbytes Page：8 Pages	SimpleDriveRequirements	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRHM9150	文件：136.56 Kbytes Page：8 Pages	RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA)	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF

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详细参数

型号：
MAX9150EUI
制造商：
Maxim Integrated Products
功能描述：
LOW-JITTER, 10-PORT LVDS REPEATER - Bulk

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MAX9150EUI	ADI(亚德诺)/MAXIM(美信)	23+	-	7793	支持大陆交货,美金交易。原装现货库存。	询价
深圳市一线半导体有限公司	MAX9150EUI	MAX	0342+	TSSOP28	348		询价
深圳市佳鑫美电子科技有限公司	MAX9150EUI	MAXIM	22+	28/TSSOP	5500	优势产品!100%全新原装现货供应	询价
深圳市卓越微芯电子有限公司	MAX9150EUI	MAXIM	2020+	TSSOP28	5000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市博浩通科技有限公司	MAX9150EUI	MAXIM	23+	TSSOP28	7750	全新原装优势	询价
深圳市福安瓯科技有限公司	MAX9150EUI	MAXIM	22+	TSSOP-28	5000	品牌一级代理,新加坡香港上百万现货,欢迎查询!	询价
深圳市毅创腾电子科技有限公司	MAX9150EUI	MAXIM	23+	TSSOP28	3700	绝对全新原装!现货!特价!请放心订购!	询价
深圳市欧立现代科技有限公司	MAX9150EUI	MAXIM	24+	TSSOP28	6980	原装现货,可开13%税票	询价
深圳市鑫宇杨电子科技有限公司	MAX9150EUI	MAXIM	2020+	SOP	35000	100%进口原装正品公司现货库存	询价
深圳市永贝尔科技有限公司	MAX9150EUI	MAXIM	23+	NA	25060	只做进口原装,终端工厂免费送样	询价

更多MAX9150EUI供应商更新时间2024-6-18 16:41:00

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