3.0V/3.3V Microprocessor Supervisory Circuits

General Description These microprocessor (µP) supervisory circuits reduce the complexity and number of components required for power-supply monitoring and battery-control functions in µP systems. They significantly improve system reliability and accuracy compared to separate ICs or discrete compo

文件：100.16 Kbytes 页数：12 Pages

MAXIM

美信

Silicon MOS IC

Silicon MOS IC ■Features ●Output MOSFET with high breakdown voltage for voltage step-up, EL driver and CMOS control circuits are integrated into one chip. ●Oscillation circuit is incorporated ●EL voltage controlled push-pull drive system achieves higher EL light intensity. (160Vp-p

文件：35.46 Kbytes 页数：2 Pages

PANASONIC

松下

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

文件：57.77 Kbytes 页数：6 Pages

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

文件：57.77 Kbytes 页数：6 Pages

NEC

瑞萨