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MJE803

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ​​​​​​​ •HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC •ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJE803

SILICONNPNPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJE803

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJE803

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE803

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE803

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE803

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJE803

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJE803

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJE803

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美国中央半导体

详细参数

  • 型号:

    MAX803REXR-T

  • 功能描述:

    监控电路

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 输出类型:

    Active Low, Open Drain

  • 人工复位:

    Resettable

  • 监视器:

    No Watchdog

  • 电池备用开关:

    No Backup

  • 上电复位延迟(典型值):

    10 s

  • 电源电压-最大:

    5.5 V

  • 最大工作温度:

    + 85 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    UDFN-6

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
MAXIM
23+
NA
25060
只做进口原装,终端工厂免费送样
询价
MAXIM
25+23+
44768
绝对原装正品现货,全新深圳原装进口现货
询价
MAXIM/美信
23+
SOT23
50000
全新原装正品现货,支持订货
询价
MAXIM/美信
24+
NA/
321
优势代理渠道,原装正品,可全系列订货开增值税票
询价
UTG
23+
SC70-3
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MAXIM/美信
23+
SC70-3
50000
全新原装正品现货,支持订货
询价
MAXIM/美信
24+
SC70-3
60000
全新原装现货
询价
MAX
24+
SOT-23
2250
100%全新原装公司现货供应!随时可发货
询价
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
ON/安森美
24+
SOT-23
30100
只做正品原装现货
询价
更多MAX803REXR-T供应商 更新时间2025-7-16 9:02:00