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IRF730

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOMDc Components

直流元件直流元件有限公司

IRF730

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

IRF730

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

IRF730

N-channelmosfettransistor

Features •WithTO-220package •Simpledriverequirements •Fastswitching •VDSS=400V;RDS(ON)≤1.0Ω;ID=5.5A •1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF730

PowerMOSFET

VishayVishay Siliconix

威世科技

IRF730

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF730areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. FEATURES ●RDS(ON)=1.00Ω@VGS=10V ●Ultralowgatec

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF730

6.0A400VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

FCI

Amphenol ICC

IRF730

HighPowerFactor/LowTHD

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF730

6.0A,400V,1.0廓N-CHANNELPOWERMOSFET

DESCRIPTION ➤IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecov

FS

First Silicon Co., Ltd

MBR730

Metalofsiliconrectifier,majontycarrierconducton

Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Cas

KERSEMI

Kersemi Electronic Co., Ltd.

MBR730

7.5AmpSchottkyBarrierRectifier20to60Volts

MCCMicro Commercial Components

美微科美微科半导体公司

MBR730

SCHOTTKYBARRIERRECTIFIERS

FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇TheplasticmaterialcarriesU/Lrecognition94V

DSK

Diode Semiconductor Korea

MBR730

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to100VoltsForwardCurrent-7.5Amperes FEATURES ♦TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ♦Constructionutilizesvoid-freemoldedplastictechnique ♦Lowreverseleakage ♦Highforwardsurgecurrentcapab

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰达半导体深圳辰达半导体有限公司

MBR730

Metalofsiliconrectifier,majontycarrierconducton

Features •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassifications94V-0 •Metalsiliconjunction,majoritycarrierconduction •Lowpowerloss,highefficiency •Guardringforovervoltageprotection •Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolar

KERSEMI

Kersemi Electronic Co., Ltd.

MBR730

Metalofsiliconrectifier,majontycarrierconducton

Features •Metalofsiliconrectifier,majontycarrierconducton •Guardringfortransientprotection •Lowpowerlosshighefficiency •Highsurgecapacity,Highcurrentcapability •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Cas

KERSEMI

Kersemi Electronic Co., Ltd.

MBR730

SchottkyBarrierRectifier

FEATURES •SchottkyBarrierChip •GuardRingDieConstructionforTransientProtection •LowPowerLoss/HighEfficiency •HighSurgeCapability •HighCurrentCapability,LowForwardVoltageDrop •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATI

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MBR730

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MBR730

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MBR730

7.5AmpSchottkyBarrierRectifier20to60Volts

MCCMicro Commercial Components

美微科美微科半导体公司

详细参数

  • 型号:

    MAX730A

  • 制造商:

    MAXIM

  • 制造商全称:

    Maxim Integrated Products

  • 功能描述:

    5V, Step-Down, Current-Mode PWM DC-DC Converters

供应商型号品牌批号封装库存备注价格
MAXIM
23+
NA
25060
只做进口原装,终端工厂免费送样
询价
MAXIM/美信
DIP8
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MAXIM
1116+
SOP8
6869
绝对原装现货
询价
MAX
1430+
SOP
5800
全新原装,公司大量现货供应,绝对正品
询价
MAXIM
22+
SOP8
5000
品牌一级代理,新加坡香港上百万现货,欢迎查询!
询价
MAXIM
15+
SOP
30
全新原装正品现货
询价
MAXIM
06+
SOIC
4167
全新进口原装现货,价优
询价
MAX
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
MAX
2022
2000
原厂原装正品,价格超越代理
询价
MAXIM
23+
SOP-8
3500
绝对全新原装!现货!特价!请放心订购!
询价
更多MAX730A供应商 更新时间2024-5-15 9:01:00