MAX6065BEUR+T

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 电压基准 描述：IC VREF SERIES 0.4% SOT23-3

MAX6065BEUR-T

Precision,Micropower,Low-Dropout,High-Output-Current,SOT23VoltageReferences

GeneralDescription TheMAX6061–MAX6068areprecision,low-dropout,micropowervoltagereferences.Thesethree-terminaldevicesareavailablewithoutputvoltageoptionsof1.25V,1.8V,2.048V,2.5V,3V,4.096V,4.5V,and5V.Theyfeatureaproprietarycurvature-correctioncircuitandlaser-tri

MAXIM6065

PLASTICENCAPSULATEDDEVICES

DeviceDescription General TheMAX6100isalow-cost,low-dropout(LDO),micropowervoltagereferences.Thisthree-terminalreferencehasanoutputvoltageoptionof1.8V.Itfeaturesaproprietarycurvature-correctioncircuitandlaser-trimmed,thin-filmresistorsthatresultinalowtemperatu

MDR-6065

ACandDCcoils,latchingandnon-latching

MN6065A

1500WATTSPEAKPOWERDISSIPATION

NCE6065AG

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6065AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=65A RDS(ON)

NCE6065G

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE6065Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=65A RDS(ON)

RJP6065

SiliconNChannelIGBTHighSpeedPowerSwitching

*Lowcollectortoemittersaturationvoltage VCE(sat)=1.8Vtyp.(IC=40A,VGE=15V,Ta=25°C)  *Gatetoemittervoltagerating30V *Pb-freeleadplatingandchipbonding

RJP6065DPM

SiliconNChannelIGBTHighSpeedPowerSwitching

*Lowcollectortoemittersaturationvoltage VCE(sat)=1.8Vtyp.(IC=40A,VGE=15V,Ta=25°C)  *Gatetoemittervoltagerating30V *Pb-freeleadplatingandchipbonding

S6065J

RoHSCompliant,Electrically-isolatedpackage