200mW Single-Chip Transmitter ICs for 868MHz/915MHz ISM Bands

文件：378.1 Kbytes 页数：17 Pages

Maxim

美信

Package：28-WFQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：RF/IF，射频/中频和 RFID 射频发射器 描述：RF TX IC ASK 902-928MHZ 28WFQFN

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亚德诺

Package：28-WFQFN 裸露焊盘；包装：卷带（TR） 类别：RF/IF，射频/中频和 RFID 射频发射器 描述：RF TX IC ASK 902-928MHZ 28WFQFN

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亚德诺

POWER TRANSISTORS(10A,60V,75W)

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

文件：119.15 Kbytes 页数：2 Pages

MOSPEC

统懋

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) • High DC Current Gain- : hFE= 25-100@IC= -3A • Complement to Type MJE2801T APPLICATIONS • Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel.

文件：101.57 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

... designed for use as output device in complementary audio amplifiers up to 30-Watts music power per channel FEATURES: • Collector-Emitter Sustaining Voltage- VCEO(sus) = 60 V (Min) * DC Current Gain- hFE = 25-100 @ Ic = 3.0 A

文件：118.85 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司